Advanced HEXFET® Power MOSFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of
Showing posts with label HEXFET® Power MOSFET. Show all posts
Showing posts with label HEXFET® Power MOSFET. Show all posts
Sunday, May 6, 2012
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