HEXFET® Power MOSFET

Advanced HEXFET® Power MOSFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of 

applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

                                                                IRF Z44N

Absolute Maximum Ratings

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting TJ = 25°C, L = 0.48mH RG = 25W, IAS = 25A.

ISD £ 25A, di/dt £ 230A/μs, VDD £ V(BR)DSS, TJ £ 175°C.

Pulse width £ 400μs; duty cycle £ 2%.

This is a typical value at device destruction and represents operation outside rated limits.

This is a calculated value limited to TJ = 175°C .

                                                                  IRF Z44N

Description                 

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.                     

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

VDD = 25V, starting TJ = 25°C, L = 1.0mH RG = 25W, IAS = 10A.

ISD £ 10A, di/dt £ 280A/μs, VDD £ V(BR)DSS, TJ £ 175°C

Pulse width £ 300μs; duty cycle £ 2%.

                                                               IRF Z48N 

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings

                                                        

NOTES:

Repetitive rating; pulse width limited bymax. junction temperature.

Starting TJ = 25°C, L = 0.37mH RG = 25W, IAS = 32A.

ISD £ 32A, di/dt £ 220A/μs, VDD £ V(BR)DSS, TJ £ 175°C

Pulse width £ 400μs; duty cycle £ 2%.

This is the destructive value not limited to the thermal limit.

This is the thermal limited value.